13013 tkim/72512 tkim/62405ea msim tb-00001406/52501 ts kt ta-3259 no.6309-1/8 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2SA2016/2sc5569 bipolar transistor (-)50v, (-)7a, low vce(sat), (pnp)npn single pcp applicaitons ? relay drivers, lamp drivers, motor drivers, ash features ? adoption of fbet and mbit processes ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? ultrasmall package facilitales miniaturization in end products ? high allowable power dissipation ( )2SA2016 speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (-50)100 v collector-to-emitter voltage v ces (-50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v continued on next page. package dimensions unit : mm (typ) 7008b-003 ordering number : en6309d product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 top view bottom view 0.75 2SA2016-td-e 2sc5569-td-e aw lot no. ff lot no. 2sc5569 2SA2016 2 3 1 2sc5569 2 3 1 2SA2016
2SA2016 / 2sc5569 no.6309-2/8 continued from preceding page. parameter symbol conditions ratings unit collector current i c (--)7 a collector current (pulse) i cp (--)10 a base current i b (--)1.2 a collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w tc=25c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (290)330 mhz output capacitance cob v cb =(--)10v, f=1mhz (50)28 pf collector-to-emitter saturation voltage v ce (sat)1 i c =(--)3.5a, i b =(--)175ma (--230)160 (--390)240 mv v ce (sat)2 i c =(--)2a, i b =(--)40ma (--240)110 (--400)170 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)40ma (--)0.83 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 a, r be =0 (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (40)30 ns storage time t stg (225)420 ns fall time t f 25 ns switching time test circuit ordering information device package shipping memo 2SA2016-td-e pcp 1,000pcs./reel pb free 2sc5569-td-e pcp 1,000pcs./reel v r r b v cc =25v v be = --5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =2.5a for pnp, the polarit y is reversed. stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SA2016 / 2sc5569 no.6309-3/8 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 7 6 5 4 3 2 1 0.4 0.8 1.2 1.6 2.0 0 0 i b =0ma -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --10ma --20ma --30ma --40ma --50ma --60ma --70ma --80ma --90ma --100ma 10ma 20ma 30ma 40ma 50ma 60ma 70ma 80ma 90ma 100ma i b =0ma it00206 it00207 2sc5569 2SA2016 h fe -- i c h fe -- i c dc current gain, h fe collector current, i c -- a collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2sc5569 v ce =2v ta=75 c 25 c --25 c ta=75 c 25 c --25 c 2SA2016 v ce = --2v -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.0 --1.2 it00208 it00209 --1000 --100 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --10 --0.01 --0.1 23 57 23 57 2 3 57 --1.0 --10 ta=75 c --25 c it00212 2SA2016 i c / i b =20 1000 100 2 3 5 7 2 3 5 7 10 2 3 5 7 1.0 0.01 0.1 23 57 23 57 23 57 1.0 10 ta=75 c --25 c it00214 2sc5569 i c / i b =20 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 2SA2016 v ce = --2v it00210 1000 100 7 5 3 2 7 5 3 2 10 0.01 3 25 10 0.1 73 257 3 257 1.0 ta=75 c --25 c 25 c 2sc5569 v ce =2v it00211 25 c 25 c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a
2SA2016 / 2sc5569 no.6309-4/8 --0.01 --0.1 23 57 23 57 2 3 57 --1.0 --10 --10000 7 5 3 2 7 5 3 2 --1000 7 5 3 2 --10 --100 it00213 ta=75 c 75 c 25 c 25 c --25 c ta= --25 c 2SA2016 i c / i b =50 0.01 0.1 23 57 23 57 23 57 1.0 10 10000 1000 7 5 3 2 7 5 3 2 7 5 3 2 100 10 it00215 ta=75 c 25 c -- 2 5 c 2sc5569 i c / i b =50 v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a v be (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv 10000 1000 100 0.01 0.1 1.0 10 ta= --25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sc5569 i c / i b =50 it00217 --10000 --1000 --100 --0.01 --0.1 --1.0 --10 ta= --25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 2 3 57 2SA2016 i c / i b =50 it00216 25 c 25 c 7 3 100 10 2 5 1000 7 5 3 2 --0.01 257 777 3 --0.1 25 325 3 --1.0 --10 5 it00220 2SA2016 v ce = --10v 7 3 100 10 2 5 1000 7 5 3 2 0.01 257 777 3 0.1 25 325 3 1.0 10 5 it00221 2sc5569 v ce =10v 5 3 2 7 5 3 2 2 7 5 3 100 10 0.1 23 3 3 57 7 57 1.0 2 10 2 55 it00219 2sc5569 f=1mhz 5 3 2 7 5 3 2 2 7 5 3 100 10 5 --0.1 23 3 3 777 5 --1.0 2 --10 2 55 it00218 2SA2016 f=1mhz cob -- v cb f t -- i c f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf gain-bandwidth product, f t -- mhz collector current, i c -- a collector current, i c -- a gain-bandwidth product, f t -- mhz
2SA2016 / 2sc5569 no.6309-5/8 a s o p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector-to-emitter voltage, v ce -- v collector current, i c -- a 0 2.0 1.5 1.3 1.0 0.5 20 060 40 80 100 140 120 160 it00223 10 1.0 0.01 2 7 5 3 2 7 5 3 2 0.1 7 5 3 2 1.0 0.1 10 100 25 37 25 37 25 37 i cp =10a i c =7a 1m s dc o p eration it00222 2SA2016 / 2sc5569 tc=25 c single pulse for pnp, the minus sign is omitted. 100ms 10ms 2SA2016 / 2sc5569 100 s 500 s mounted on a ceramic board (250mm 2 ? 0.8mm) p c -- tc case temperature, tc -- c collector dissipation, p c -- w 4.0 0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 20 060 40 80 100 140 120 160 p c -- tc it01535 2SA2016 / 2sc5569
2SA2016 / 2sc5569 no.6309-6/8 bag packing speci cation 2SA2016-td-e, 2sc5569-td-e
2SA2016 / 2sc5569 no.6309-7/8 outline drawing land pattern example 2SA2016-td-e, 2sc5569-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.8 1.5 3.7 1.5 3.0 1.0 1.0
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